b29w008a/811 1/2 complete data available on data-on-disc cd-rom or at www.st.com M29W008AT m29w008ab 8 mbit (1mb x8, boot block) low voltage single supply flash memory data briefing 2.7v to 3.6v supply voltage for program, erase and read operations fast access time: 80ns fast programming time: 10 m s typical program/erase controller (p/e.c.) C program byte-by-byte C status register bits and ready/busy output security protection memory area instructions address coding: 3 digits memory blocks C boot block (top or bottom location) C parameter and main blocks block, multi-block and chip erase multi block protection/temporary unprotection modes erase suspend and resume modes C read and program another block during erase suspend low power consumption C stand-by and automatic stand-by 100,000 program/erase cycles per block 20 years data retention C defectivity below 1ppm/year electronic signature C manufacturer code: 20h C device code, M29W008AT: d2h C device code, m29w008ab: dch description the m29w008a is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a byte-by-byte basis using only a single 2.7v to 3.6v v cc supply. for program and erase operations the necessary high voltages are generated internally. the device can also be programmed in standard programmers. the array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. blocks can be protected against pro- graming and erase on programming equipment, and temporarily unprotected to make changes in the application. each block can be programmed and erased over 100,000 cycles. ai02716 20 a0-a19 w dq0-dq7 v cc M29W008AT m29w008ab e v ss 8 g rp rb logic diagram tsop40 (n) 10 x 20 mm
2/2 a0-a19 address inputs dq0-dq7 data input/outputs, command inputs e chip enable g output enable w write enable rp reset / block temporary unprotect r b ready/busy output v cc supply voltage v ss ground signal names v ss dq1 dq2 a7 a1 e a4 a3 a11 a17 a14 a15 dq7 a9 a16 g nc dq5 dq3 nc v cc dq4 dq6 a8 w rb a18 nc rp ai02717 M29W008AT m29w008ab 10 1 11 20 21 30 31 40 a0 a12 a13 a19 a10 a5 a6 v cc dq0 v ss a2 tsop pin connections warning: nc = not connected. M29W008AT, m29w008ab example: M29W008AT 90 n 1 t operating voltage w 2.7v to 3.6v array matrix t top boot b bottom boot speed 80 80ns 90 90ns 100 100ns 120 120ns package n tsop40 10 x 20mm temp. range 1 0 to 70 c 5 C20 to 85 c 6 C40 to 85 c option t tape & reel packing note: devices are shipped from the factory with the memory content erased (to ffh). ordering information scheme for a list of available options or for further informa- tion on any aspect of this device, please contact the stmicroelectronics sales office nearest to you.
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